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128Mb: x16 Mobile SDRAM
Electrical Specifications
Table 11:
Electrical Characteristics and Recommended AC Operating Conditions
Notes: 5, 6, 8, 9, 11; notes appear on page 42
AC Characteristics
-75
-8
Parameter
Symbol
Min
Max
Min
Max
Units
Notes
AS
Access time from CLK (pos. edge)
Address hold time
Address setup time
CLK high-level width
CLK low-level width
CL = 3
CL = 2
t
t
AC (3)
AC (2)
t
AH
t
t
CH
t
CL
–
–
1
2.5
3
3
6
8
–
–
–
–
–
–
1
2.5
3
3
7
8
–
–
–
–
ns
ns
ns
ns
ns
ns
OH N
Clock cycle time
CKE hold time
CKE setup time
CS#, RAS#, CAS#, WE#, DQM hold time
CS#, RAS#, CAS#, WE#, DQM setup time
Data-in hold time
Data-in setup time
Data-out High-Z time
Data-out Low-Z time
Data-out hold time (load)
Data-out hold time (no load)
ACTIVE-to-PRECHARGE command
ACTIVE-to-ACTIVE command period
ACTIVE-to-READ or WRITE delay
CL = 3
CL = 2
CL = 3
CL = 2
t CK (3)
t CK (2)
t
CKH
t CKS
t CMH
t CMS
t DH
t DS
t HZ (3)
t HZ (2)
t LZ
t OH
t
t RAS
t RC
t RCD
7.5
9.6
1
2.5
1
2.5
1
2.5
–
–
1
2.5
1.8
45
67.5
19.2
100
100
–
–
–
–
–
–
6
8
–
–
–
120,000
–
–
8
12
1
2.5
1
2.5
1
2.5
–
–
1
2.5
1.8
48
72
24
100
100
–
–
–
–
–
–
7
8
–
–
–
120,000
–
–
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
23
23
10
10
Refresh period (4,096 rows)
t REF
–
64
64
ms
AUTO REFRESH period
PRECHARGE command period
ACTIVE bank a to ACTIVE bank b command
t RFC
t RP
t RRD
75
19.2
15
–
–
–
80
24
16
–
–
–
ns
ns
ns
Transition time
WRITE recovery time
t T
t WR
0.5
15
1.2
–
0.5
15
1.2
–
ns
ns
7
24
Exit SELF REFRESH-to-ACTIVE command
t
XSR
75
–
80
–
ns
20
PDF: 09005aef8237e877/Source: 09005aef8237e8d8
128Mb_x16 Mobile SDRAM_Y25M_2.fm - Rev. C 2/07 EN
39
Micron Technology, Inc., reserves the right to change products or specifications without notice.
?2006 Micron Technology, Inc. All rights reserved.
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